| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,280 pcs
|
8280 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,696 pcs
|
1696 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type |
The AOS AO3422 is an N-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It provides excellent Rds(on) and low gate charge, suitable for operation over a wide gate drive range from 2.5V to 12V.
Key electrical specifications include a drain-source breakdown voltage of 55V and a continuous drain current of 2.1A at 25°C. The Rds(on) is rated at a maximum of 160mΩ at Vgs=4.5V and 200mΩ at Vgs=2.5V. The device features a typical gate threshold voltage of 1.3V and a total gate charge of 2.6nC at Vgs=4.5V.
Thermal characteristics include a maximum junction-to-ambient thermal resistance of 157°C/W in steady state. The operating and storage temperature range is -55°C to 150°C. The AO3422 is packaged in a SOT23 surface-mount package.
This MOSFET is suitable for various applications including automotive, cloud server, computing, consumer electronics, and industrial power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the AO3422 is 55V.
The continuous drain current (Id) for the AO3422 at 25°C is 2.1A.
The Rds(on) of the AO3422 is a maximum of 160mΩ at Vgs=4.5V.
The typical gate threshold voltage (Vgs(th)) for the AO3422 is 1.3V.
The AO3422 is available in a SOT23 package.
The operating and storage temperature range for the AO3422 is -55°C to 150°C.