| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AO3420L is an N-Channel enhancement-mode MOSFET from Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and low gate charge, while supporting gate drive voltages as low as 1.8V. The device is rated for a maximum drain-source voltage of 20V and a continuous drain current of 6A at 25°C ambient (5A at 70°C). Its pulsed drain current capability reaches 30A.
The static drain-source on-resistance is specified at multiple gate voltages: 24 mΩ max at 10V (16 mΩ typical), 27 mΩ at 4.5V, 42 mΩ at 2.5V, and 55 mΩ at 1.8V. The gate threshold voltage ranges from 0.4V to 1.1V, making the device suitable for logic-level drive. Typical forward transconductance is 25 S at VDS=5V and ID=6A.
The AO3420L is housed in a standard SOT23-3 surface-mount package, offering a compact footprint for space-constrained designs. This device is designed for unidirectional or bidirectional load switch applications, as well as general-purpose low-voltage switching. Maximum junction temperature range is -55°C to +150°C.
20 V.
6 A at 25°C ambient; 5 A at 70°C.
0.75 V, with a range of 0.4 V to 1.1 V at ID=250 µA.
Typical 16 mΩ at 10V, 18 mΩ at 4.5V, 23 mΩ at 2.5V, 31 mΩ at 1.8V. Maximum values: 24 mΩ, 27 mΩ, 42 mΩ, 55 mΩ respectively.
SOT23-3 (3-lead SOT23).
-55°C to +150°C.
Yes, it can be driven with gate voltages as low as 1.8V.