| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,314 pcs
|
2314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The AO3419 is a P-Channel MOSFET manufactured by VBsemi, suitable for various industrial applications. This component operates with a drain-source voltage (V DS) of -20V and a maximum gate-source voltage (V GS) of 12V.
Key electrical characteristics include a maximum drain-source on-resistance (R DS(ON)) of 85mΩ at V GS =10V, 102mΩ at V GS =4.5V, and 140mΩ at V GS =2.5V. The continuous drain current (I D) is rated at -3.50A at 25°C, with a power dissipation (P D) of 1.40W at 25°C.
Additional parameters include a typical gate charge (Q g) of 3.10nC and a gate threshold voltage (V GS(th)) ranging from -0.50V (min) to -1.20V (max), typically -0.85V. Capacitance values such as input capacitance (C iss) are 325pF, output capacitance (C oss) are 63pF, and reverse transfer capacitance (C rss) are 37pF.
This MOSFET is housed in a compact SOT23 surface-mount package, making it suitable for space-constrained designs. It also includes an ESD diode and is qualified for industrial use.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20V
85mΩ
-3.50A
SOT23
150°C