| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,245 pcs
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1245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AO3416L is an N-Channel enhancement-mode MOSFET from Alpha & Omega Semiconductor, designed for low-voltage power management and load switching applications. It features a maximum drain-to-source voltage of 20V and a continuous drain current of 6.5A at ambient temperature. The device offers a low on-resistance of 22mOhm maximum at Vgs = 4.5V and Id = 6.5A, making it suitable for efficient power conversion.
This MOSFET is driven with a gate threshold voltage of 1V maximum at Id = 250µA and supports drive voltages of 1.8V and 4.5V. Input capacitance is rated at 1160pF at Vds = 10V, and the total gate charge is 16nC at Vgs = 4.5V, enabling moderate switching performance in DC-DC converters and low-frequency switching regulators.
The device is housed in a 3-SMD SOT-23-3 variant package with surface-mount mounting type. It operates over a junction temperature range of -55°C to +150°C with maximum power dissipation of 1.4W at ambient temperature. This combination of electrical ratings and compact footprint makes it appropriate for portable electronics, battery protection, and other space-constrained designs.
The maximum drain-to-source voltage is 20V.
The maximum continuous drain current is 6.5A at ambient temperature (Ta).
It is available in a 3-SMD SOT-23-3 variant surface-mount package. The supplier device package is SOT-23-3.
The operating junction temperature range is -55°C to +150°C.
RoHS compliance is listed as RoHS3 Compliant, but this data is unverified.