| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,886 pcs
|
3886 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AOS AO3409 is a 30V P-Channel MOSFET designed using advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of -30V and a continuous drain current (ID) of -2.6A at 25°C. The static drain-source on-resistance (RDS(ON)) is a maximum of 110mΩ at VGS=-10V and 180mΩ at VGS=-4.5V. The device also features a gate threshold voltage (VGS(th)) typically -1.9V.
With a power dissipation (PD) of 1.4W at 25°C, the AO3409 is housed in a compact SOT23 package, designed for surface mounting. Its thermal characteristics include a junction-to-ambient thermal resistance (RθJA) of 63°C/W.
This MOSFET is qualified for industrial applications and is supplied on tape and reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is -30V.
The continuous drain current (ID) is -2.6A at 25°C and -2.2A at 70°C.
The maximum on-resistance (RDS(ON)) is 110mΩ at VGS=-10V and 180mΩ at VGS=-4.5V.
The AO3409 is packaged in a SOT23 surface mount package.
The junction and storage temperature range is -55°C to 150°C.
The gate threshold voltage (VGS(th)) ranges from -1.4V to -2.4V, with a typical value of -1.9V.
The total gate charge (Qg(10V)) is 5.2nC maximum.