Mfr Part #:

AO3409

AO3409 is a 30V P-Channel MOSFET from Alpha & Omega Semiconductor with continuous drain current of -2.6A and on-resistance of 130mΩ at 10V gate drive.

✓ Total Stock: 1,941 pcs

$ Price Range: $0.09 - $0.47

AO3409 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Rayichip ✓ Non-Authorised Inventory information	1,941 pcs On Request	1941 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

AO3409 Description

Short technical summary and product information.

The AO3409 is a P-Channel enhancement-mode MOSFET fabricated using advanced trench technology to achieve low on-resistance and low gate charge. It features a maximum drain-source voltage of -30V and a continuous drain current of -2.6A at TA=25°C. The device offers a maximum on-resistance of 130mΩ at VGS=-10V and ID=-2.6A, and 180mΩ at VGS=-4.5V.

Electrical characteristics include a gate threshold voltage range of -1.4V to -2.4V, input capacitance of 240pF max at 15V, and total gate charge of 5.2nC max at 10V. Switching times are typically 7.5ns turn-on delay, 4.1ns rise, 11.8ns turn-off delay, and 3.8ns fall time.

The device is housed in a surface-mount SOT-23-3 package (3-SMD, SOT-23-3 Variant) with a maximum power dissipation of 1.4W at TA=25°C. Operating junction temperature range is -55°C to 150°C.

Suitable for load switching and PWM applications where efficient power management is needed in compact designs.

AO3409 Quick Information

Product Type: P-Channel MOSFET

Canonical Name: AO3409 - P-Channel MOSFET, 30V Vds, 2.6A Id, SOT-23-3

Subcategory: Single P-Channel MOSFET

AO3409 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

AO3409 Estimated Pricing

Qty	Low	High
1+	$0.47	$0.47
10+	$0.29	$0.29
50+	$0.21	$0.21
100+	$0.18	$0.18
500+	$0.14	$0.14
3,000+	$0.10	$0.10
9,000+	$0.09	$0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

AO3409 Features

P-Channel MOSFET with 30V drain-source voltage rating.
Continuous drain current of -2.6A at 25°C ambient.
Low on-resistance of 130mΩ at 10V gate drive.
Total gate charge of 5.2nC for efficient switching.
Surface mount SOT-23-3 package for compact designs.

AO3409 Applications

Suitable for load switch applications in portable electronics.
Used in PWM circuits requiring fast switching.
Ideal for battery power management and protection.
Applicable in DC-DC converter designs.

AO3409 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the AO3409?

The maximum drain-source voltage (Vdss) is -30V.

What package is the AO3409 available in?

It comes in a surface-mount SOT-23-3 package (3-SMD, SOT-23-3 Variant).

What is the operating temperature range of the AO3409?

The junction temperature range is -55°C to 150°C.

Is the AO3409 RoHS compliant?

It is reported as RoHS3 compliant (status unverified).

What is the typical gate threshold voltage?

The gate threshold voltage (Vgs(th)) ranges from -1.4V to -2.4V, typical -1.9V.

What is the maximum on-resistance at 10V gate drive?

The maximum Rds(on) is 130mΩ at VGS=-10V and ID=-2.6A.

What is the total gate charge of the AO3409?

Maximum total gate charge (Qg) is 5.2nC at VGS=-10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Alpha&Omega Semicondu Ctor
Current	-2.6 A
Drain to Source Voltage (Vdss)	-30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.2 nC
Input Capacitance (Ciss) (Max) @ Vds	240 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.4W (Ta)
Rds On (Max) @ Id, Vgs	130mΩ
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	-1.4V to -2.4V