AO3407A The AO3407A is a -30V P-Channel MOSFET from Alpha & Omega Semiconductor. It supports up to -4.3A continuous drain current and is offered in a SOT-23-3 surface-mount package.
Mfr Part #:

AO3407A

Available from 1 distributors
Mfr Name: Alpha&Omega Semicondu Ctor
Alpha&Omega Semicondu Ctor
The AO3407A is a -30V P-Channel MOSFET from Alpha & Omega Semiconductor. It supports up to -4.3A continuous drain current and is offered in a SOT-23-3 surface-mount package.
✓ Total Stock: 20 pcs
$ Price Range: $0.10 - $0.52

AO3407A Available from 1 distributor

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✓ Non-Authorised
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AO3407A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

AO3407A Description

Short technical summary and product information.

The AO3407A is a P-Channel enhancement-mode MOSFET manufactured by Alpha & Omega Semiconductor. Built with advanced trench technology, it features a -30V drain-source voltage rating, a ±20V gate-source voltage range, and a continuous drain current of -4.3A at 25°C ambient. The device provides low on-resistance, with typical RDS(on) of 34mΩ at VGS=-10V and 54mΩ at VGS=-4.5V, making it well-suited for load switching and PWM applications.

 

The MOSFET includes a body diode with a typical forward voltage of -0.7V and a reverse recovery time of 11ns. Its switching performance is characterized by a typical turn-on delay time of 7.5ns and a turn-off delay time of 19ns. The input capacitance is 520pF, and the total gate charge is 9.2nC at VGS=-10V, which supports efficient switching operation. The device is rated for a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.4W at 25°C ambient.

 

The AO3407A is supplied in a SOT-23-3 surface-mount package with gull-wing terminations, enabling compact PCB layouts. It is suitable for power management, high-side load switching, and DC-DC converter applications in portable and industrial electronics.

AO3407A Quick Information

Product Type: P-Channel MOSFET
Series: AO3407A
Canonical Name: AO3407A P-Channel MOSFET
Subcategory: P-Channel MOSFET

AO3407A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

AO3407A Estimated Pricing

Qty Low High
1+ $0.52 $0.52
10+ $0.32 $0.32
50+ $0.23 $0.23
100+ $0.20 $0.20
500+ $0.15 $0.15
3,000+ $0.12 $0.12
9,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

AO3407A Features

  • P-Channel MOSFET with -30V drain-source voltage.
  • Continuous drain current of -4.3A at 25°C.
  • Low on-resistance: 34mΩ typical at -10V.
  • Logic-level gate drive down to -4.5V.
  • Available in SOT-23-3 surface-mount package.

AO3407A Applications

  • Suitable for load switching circuits.
  • Use in PWM power control applications.
  • Use for high-side switching in battery-powered devices.
  • Use in DC-DC converter designs.

AO3407A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the AO3407A?

The maximum drain-source voltage is -30V.

What is the gate-source voltage rating?

The gate-source voltage rating is ±20V.

What is the continuous drain current at 25°C?

The continuous drain current is -4.3A at 25°C ambient.

What is the operating temperature range?

The junction and storage temperature range is -55°C to 150°C.

What package is the AO3407A available in?

The AO3407A is available in a SOT-23-3 surface-mount package.

Is the AO3407A RoHS compliant?

The existing database lists the AO3407A as RoHS3 Compliant, but this status is unverified.

What is the on-resistance of the AO3407A?

Static drain-source on-resistance is 34mΩ typical and 48mΩ maximum at VGS=-10V; 54mΩ typical and 78mΩ maximum at VGS=-4.5V.

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