| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The LGE AO3401 is a P Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4.2A. The on-resistance (Rds(on)) is specified at 50mOhms at 10V gate-source voltage and 4.2A drain current, indicating efficient power handling.
With a power dissipation (Pd) of 1.2W and an operating temperature up to 150°C, this MOSFET is suitable for moderate power applications. The gate threshold voltage (Vgsth) is 1V at 250uA, and it includes input capacitance (Ciss) of 950pF and total gate charge (Qg) of 9.5nC at 4.5V.
The AO3401 is housed in a compact SOT-23 surface-mount package, making it ideal for space-constrained designs. Its P Channel configuration and electrical characteristics make it a versatile component for switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) of the AO3401 MOSFET is 30V.
The continuous drain current (Id) for the AO3401 is 4.2A.
The drain-source on-resistance (Rds(on)) of the AO3401 is 50mOhms at 10V Vgs and 4.2A Id.
The power dissipation (Pd) of the AO3401 is 1.2W.
The operating temperature (Tj) for the AO3401 is up to +150°C.
The AO3401 is a P Channel MOSFET.
The AO3401 MOSFET is supplied in a SOT-23 package.