| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
8,100 pcs
|
8100 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| SVHC Present |
The AOS AO3160 is an N-Channel MOSFET fabricated using an advanced high voltage process, suitable for popular AC-DC applications. It offers a Drain-Source Voltage (VDS) of 600V and a continuous drain current (ID) of 0.04A at 25°C. The device has a typical Gate Threshold Voltage (VGS(th)) of 2V and a maximum Static Drain-Source On-Resistance (RDS(ON)) of 500 Ohms at VGS=10V.
Key electrical characteristics include an input capacitance (Ciss) of 10pF, output capacitance (Coss) of 1.8pF, and reverse transfer capacitance (Crss) of 0.7pF. Switching parameters such as turn-on delay time (tD(on)) are typically 4ns, and turn-off delay time (tD(off)) are typically 12.5ns.
The AO3160 is supplied in a SOT23A surface-mount package. It has a maximum junction temperature of 150°C and a typical junction-to-ambient thermal resistance of 70°C/W. This part is marked as obsolete, with AO3160E suggested as a replacement.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the AO3160 is 600V.
The typical Gate Threshold Voltage (VGS(th)) for the AO3160 is 2V.
The maximum Static Drain-Source On-Resistance (RDS(ON)) for the AO3160 at VGS=10V is 500 Ohms.
The AO3160 MOSFET is supplied in a SOT23A package.
The typical input capacitance (Ciss) of the AO3160 is 10pF.
The typical turn-on delay time (tD(on)) for the AO3160 is 4ns.
The typical turn-off delay time (tD(off)) for the AO3160 is 12.5ns.