| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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27,000 pcs
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27000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AO3160 is an N-Channel MOSFET fabricated using an advanced high-voltage process. It is designed for AC-DC power supply applications, offering a maximum drain-source voltage of 600V and continuous drain current of 40mA. The device features low on-resistance, with Rds(on) less than 500 ohms at Vgs=10V and less than 600 ohms at Vgs=4.5V. It also includes guaranteed avalanche capability for robust performance.
This MOSFET is housed in a compact SOT23-3 surface-mount package, making it suitable for space-constrained designs. The junction temperature range is from -50°C to 150°C, and the device has a typical threshold voltage of 2V (range 1.4V to 3.2V). The AO3160 is a reliable choice for offline power supply designs and other high-voltage switching applications.
The maximum drain-source voltage is 600V.
The AO3160 is housed in a SOT23-3 surface-mount package.
The junction and storage temperature range is -50°C to 150°C.
The gate threshold voltage ranges from 1.4V to 3.2V, with a typical value of 2V.
The static drain-source on-resistance is less than 500 ohms at Vgs=10V and less than 600 ohms at Vgs=4.5V.