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759 pcs
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759 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AM0912-300 from ST is a broadband, high peak pulse power RF & Microwave Transistor specifically designed for avionics applications. It provides a minimum output power of 300W with a minimum gain of 7.0 dB across a bandwidth of 255 MHz.
This device is engineered for applications requiring broad bandwidth with moderate duty cycle and pulse width constraints, such as ground/ship based DME/TACAN systems. It is also suitable for specialized applications with short pulse widths and high burst or overall duty cycles. The AM0912-300 can withstand a 15:1 VSWR mismatch load condition at any phase angle under full rated conditions.
It is housed in a BIG-PAC Hermetic Metal/Ceramic package and features internal input/output matching structures. Key electrical specifications include a maximum power dissipation of 940W, a maximum device current of 24A, and a collector-supply voltage of 50V. The junction temperature can reach up to 250°C during pulsed RF operation.
This transistor is designed for surface mount applications and offers robust performance for demanding avionics environments.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum output power is 300 W at 960-1215MHz with 60W input power and 50V VCC.
The minimum power gain is 7.0 dB at 960-1215MHz with 60W input power and 50V VCC.
The bandwidth is 255 MHz.
The maximum junction temperature for pulsed RF operation is 250 °C.
The junction-to-case thermal resistance is 0.16 °C/W under rated RF amplifier operation.
Yes, the device is capable of withstanding a 15:1 VSWR mismatch load condition at any phase angle under full rated conditions.