| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon AIMW120R045M1 is a Silicon Carbide (SiC) Trench MOSFET designed for high-efficiency power applications. This revolutionary semiconductor material enables very low switching losses and a threshold-free on-state characteristic.
Key electrical specifications include a maximum Drain-Source Voltage (VDS) of 1200V and a continuous Drain Current (ID) of 52A at 25°C with a gate-source voltage of 15V. The typical on-resistance (RDS(on)) is 45mΩ under the same test conditions. The device features a benchmark gate threshold voltage (VGS(th)) of 4.5V and is IGBT-compatible for driving with 15V for turn-on and 0V for turn-off.
This MOSFET is qualified for automotive applications according to AEC-Q100/101 standards. It is housed in a PG-TO247-3-41 package, suitable for through-hole mounting. The maximum junction temperature is rated at 175°C.
Potential applications include On-board Chargers/PFC, Booster/DC-DC Converters, and Auxiliary Inverters, benefiting from efficiency improvements, higher frequency operation, and reduced cooling efforts.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 1200V.
The continuous drain current (ID) is 52A at 25°C with a gate-source voltage of 15V.
The typical on-resistance (RDS(on)) is 45mΩ at 25°C with a drain current of 20A and gate-source voltage of 15V.
The benchmark gate threshold voltage (VGS(th)) is 4.5V.
The maximum junction temperature (Tvjmax) is 175°C.
The component is supplied in a PG-TO247-3-41 package.