AIMW120R035M1H The Infineon AIMW120R035M1H is a 1200V Silicon Carbide Trench MOSFET. It offers 52A continuous drain current and a low on-resistance of 35mΩ.
Mfr Part #:

AIMW120R035M1H

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon AIMW120R035M1H is a 1200V Silicon Carbide Trench MOSFET. It offers 52A continuous drain current and a low on-resistance of 35mΩ.
✓ Total Stock: 21 pcs
$ Price Range: $3.03

AIMW120R035M1H Available from 1 distributor

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✓ Non-Authorised
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AIMW120R035M1H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
SVHC Present

AIMW120R035M1H Description

Short technical summary and product information.

The Infineon AIMW120R035M1H is a 1200V Silicon Carbide (SiC) Trench MOSFET designed for high-efficiency power applications. This component features a revolutionary semiconductor material, offering very low switching losses and a threshold-free on-state characteristic.

 

Key electrical specifications include a maximum drain-source voltage (VDS) of 1200V, a continuous drain current (ID) of 52A, and a typical on-resistance (RDS(on)) of 35mΩ at 25°C with a gate-source voltage of 18V. The device has a benchmark gate threshold voltage (VGS(th)) of 4.5V and is compatible with IGBT driving voltages, requiring 18V for turn-on and 0V for turn-off.

 

Qualified for automotive applications according to AEC-Q100/101, this MOSFET is suitable for demanding environments. Its benefits include efficiency improvement, enabling higher frequencies, increased power density, and reduced cooling efforts.

 

The AIMW120R035M1H is housed in a PG-TO247-3-41 package, suitable for through-hole mounting. Its robust design and advanced SiC technology make it ideal for applications such as on-board chargers, PFC, and DC-DC converters.

AIMW120R035M1H Quick Information

Product Type: Silicon Carbide MOSFET
Series: G1
Canonical Name: Infineon AIMW120R035M1H Silicon Carbide MOSFET
Subcategory: Silicon Carbide Trench MOSFET

AIMW120R035M1H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AIMW120R035M1H Estimated Pricing

Qty Low High
1+ $3.03 $3.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

AIMW120R035M1H Features

  • Revolutionary Silicon Carbide material.
  • Very low switching losses.
  • Threshold-free on state characteristic.
  • IGBT-compatible driving voltage.
  • Qualified for automotive applications.

AIMW120R035M1H Applications

  • Suitable for On-board Charger/PFC.
  • Ideal for Booster/DC-DC Converter.
  • Enables higher frequency operation.
  • Increases power density.
  • Reduces cooling effort.

AIMW120R035M1H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the AIMW120R035M1H?

The maximum drain-source voltage is 1200V.

What is the continuous drain current rating?

The continuous drain current is 52A.

What is the typical on-resistance of this MOSFET?

The typical on-resistance is 35mΩ at 25°C with a gate-source voltage of 18V and a drain current of 25A.

What is the maximum operating junction temperature?

The maximum junction temperature is 175°C.

What is the gate threshold voltage?

The gate threshold voltage is typically 4.5V.

What package type is the AIMW120R035M1H supplied in?

It is supplied in the PG-TO247-3-41 package.

Is this MOSFET qualified for automotive applications?

Yes, it is qualified for automotive applications according to AEC-Q100/101.

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