| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21 pcs
|
21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| SVHC Present |
The Infineon AIMW120R035M1H is a 1200V Silicon Carbide (SiC) Trench MOSFET designed for high-efficiency power applications. This component features a revolutionary semiconductor material, offering very low switching losses and a threshold-free on-state characteristic.
Key electrical specifications include a maximum drain-source voltage (VDS) of 1200V, a continuous drain current (ID) of 52A, and a typical on-resistance (RDS(on)) of 35mΩ at 25°C with a gate-source voltage of 18V. The device has a benchmark gate threshold voltage (VGS(th)) of 4.5V and is compatible with IGBT driving voltages, requiring 18V for turn-on and 0V for turn-off.
Qualified for automotive applications according to AEC-Q100/101, this MOSFET is suitable for demanding environments. Its benefits include efficiency improvement, enabling higher frequencies, increased power density, and reduced cooling efforts.
The AIMW120R035M1H is housed in a PG-TO247-3-41 package, suitable for through-hole mounting. Its robust design and advanced SiC technology make it ideal for applications such as on-board chargers, PFC, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 1200V.
The continuous drain current is 52A.
The typical on-resistance is 35mΩ at 25°C with a gate-source voltage of 18V and a drain current of 25A.
The maximum junction temperature is 175°C.
The gate threshold voltage is typically 4.5V.
It is supplied in the PG-TO247-3-41 package.
Yes, it is qualified for automotive applications according to AEC-Q100/101.