| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Current | |
| Forward Voltage | |
| Mounting Style | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation | |
| Reverse Current | |
| Technology |
The Infineon AIDW10S65C5XKSA1 is a Schottky diode manufactured by Infineon Technologies. This component is designed for use in power electronic applications.
Key electrical specifications include a repetitive reverse voltage (Vrrm) of 650V and a forward current (If) of 10A. The forward voltage (Vf) is rated at 1.5V, and the surge current (Ifsm) is 58A. The diode has a power dissipation (Pd) of 65W.
Operating temperature ranges from a minimum of -40C to a maximum of +175C. The technology utilized is Silicon Carbide (SiC).
This diode is housed in a TO-247-3 package and features a through-hole mounting style. The package description is Tube.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive reverse voltage is 650V.
The forward current is 10A.
The operating temperature ranges from -40C to +175C.
It is supplied in a TO-247-3 package.
The technology is Silicon Carbide (SiC).