| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
636 pcs
|
636 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure | |
| Quiescent Current | |
| Supply Voltage |
The Qorvo AH102A-G is a GaAs MESFET technology amplifier designed for applications requiring high linearity. It operates within a frequency range of 0.35 GHz to 3 GHz, providing a nominal gain of 14.5 dB and a P1dB of +27 dBm. The device boasts a high Output IP3 of +46 dBm, making it suitable for demanding wireless communication systems.
This amplifier features internal matching and operates from a single +9 V supply. It is housed in an environmentally-friendly, RoHS-compliant SOT-89 surface mount package. The superior thermal design contributes to a Mean Time Between Failures (MTTF) exceeding 1000 years at +85 °C mounting temperature.
The AH102A-G is well-suited for both narrow and broadband applications, including GSM, CDMA, WCDMA, and LTE technologies, as well as other broadband wireless applications within its operating frequency range. Its combination of performance and package makes it an ideal choice for various current and next-generation wireless infrastructure.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
0.35 GHz to 3 GHz.
14.5 dB nominal.
27 dBm.
46 dBm.
Maximum supply voltage is 9 V.
SOT-89 surface-mount package.
3.1 dB nominal.