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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AFV10700GSR5 is an RF power LDMOS transistor from NXP Semiconductors, designed for pulse applications operating at 960 to 1215 MHz. It is suitable for defense and commercial pulse systems such as IFF, secondary surveillance radars, ADS-B transponders, DME, and other complex pulse chains.
Key electrical specifications include a drain voltage of 50V, quiescent drain current of 100mA, and typical output power of 700W at 1.03-1.09GHz with 19.2dB gain. The device uses LDMOS technology in a dual configuration, enabling single-ended, push-pull, or quadrature operation.
The transistor is internally input and output matched for broadband ease of use and features high ruggedness, handling >20:1 VSWR without degradation. It is qualified up to 55V drain operation and includes integrated ESD protection.
Packaged in the NI-780GS-4L case, the AFV10700GSR5 is chassis-mounted for robust thermal and mechanical performance in high-power RF systems.
| Qty | Low | High |
|---|---|---|
| 50+ | $786.72 | $786.72 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal drain voltage is 50V.
It comes in an NI-780GS-4L package with chassis mount.
It is listed as RoHS3 compliant, but this status is unverified.
The frequency range is 1.03GHz to 1.09GHz.
Typical output power is 700W.
Typical gain is 19.2dB.
It is chassis mounted.