| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Configuration | |
| Current | |
| Frequency | |
| Gain | |
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| Tape & Reel | |
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The NXP AFV09P350-04NR3 is a dual LDMOS RF power transistor designed for high-frequency applications. It operates at 920 MHz with an output power of 100W and provides a typical gain of 19.5 dB. The transistor is configured as a dual device with a drain current of 860 mA and a drain-source voltage of 48 V.
This surface mount component is housed in the OM-780-4L package, suitable for automated assembly. The LDMOS technology offers high efficiency and linearity for RF power amplifier designs.
Ideal for use in wireless infrastructure, ISM band transmitters, and other RF power applications requiring robust performance at 920 MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $163.39 | $163.39 |
| 10+ | $138.61 | $138.61 |
| 25+ | $131.79 | $131.79 |
| 50+ | $128.62 | $128.62 |
| 100+ | $118.56 | $118.56 |
| 250+ | $118.56 | $118.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
920 MHz.
100 W.
19.5 dB.
48 V.
860 mA.
OM-780-4L surface mount package.
Yes, it is marked as RoHS3 Compliant (unverified).