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AFT27S010NT1 AFT27S010NT1 is an RF LDMOS FET from NXP Semiconductors offering 1.26W output power and 21.7dB gain across 728MHz to 3.6GHz. It comes in a surface mount PLD-1.5W package and operates at 28V supply.
Mfr Part #:

AFT27S010NT1

Available from 3 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
AFT27S010NT1 is an RF LDMOS FET from NXP Semiconductors offering 1.26W output power and 21.7dB gain across 728MHz to 3.6GHz. It comes in a surface mount PLD-1.5W package and operates at 28V supply.
✓ Total Stock: 6,214 pcs
$ Price Range: $8.80 - $14.17

AFT27S010NT1 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
2,800 pcs
On Request
2800 pcs On Request 1 On Request On Request 23+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request 21+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,414 pcs
On Request
1414 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

AFT27S010NT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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AFT27S010NT1 Description

Short technical summary and product information.

The AFT27S010NT1 is an RF LDMOS FET designed by NXP Semiconductors for high-frequency power amplification. It delivers 1.26W of output power with a gain of 21.7dB, operating over a wide frequency range from 728MHz to 3.6GHz. The device is built using LDMOS technology, which provides high efficiency and linearity for RF applications.

 

The transistor is supplied in a surface mount PLD-1.5W package, suitable for automated assembly processes. It requires a 28V supply voltage and draws 90mA of supply current. The leakage current is specified at 10µA. This component is intended for RF power amplifier stages in wireless infrastructure and other high-frequency communication systems.

AFT27S010NT1 Quick Information

Product Type: RF LDMOS FET
Canonical Name: AFT27S010NT1 RF LDMOS FET
Subcategory: RF Power Transistor

AFT27S010NT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: REACH Unaffected

AFT27S010NT1 Estimated Pricing

Qty Low High
1+ $14.17 $14.17
1,000+ $8.80 $8.80

Estimated market price range - modelled values for guidance only, not live distributor offers.

AFT27S010NT1 Features

  • LDMOS technology for RF power amplification.
  • 1.26W output power at 28V supply.
  • 21.7dB gain across 728MHz to 3.6GHz.
  • Surface mount PLD-1.5W package.
  • 90mA supply current with 10µA leakage.

AFT27S010NT1 Applications

  • RF power amplifier stages in wireless infrastructure.
  • Broadband communication systems up to 3.6GHz.
  • Cellular base station transmitter chains.
  • Industrial RF heating and plasma generators.
  • Test and measurement equipment RF drivers.

AFT27S010NT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the output power of the AFT27S010NT1?

The AFT27S010NT1 delivers 1.26W of output power.

What is the gain of the AFT27S010NT1?

The gain is 21.7dB.

What is the operating frequency range of the AFT27S010NT1?

The frequency range is 728MHz to 3.6GHz.

What package does the AFT27S010NT1 use?

It uses a surface mount PLD-1.5W package.

What is the supply voltage for the AFT27S010NT1?

The supply voltage is 28V.

Is the AFT27S010NT1 RoHS compliant?

It is listed as RoHS3 Compliant, though this is unverified.

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