AFT27S006NT1 The AFT27S006NT1 is an RF LDMOS MOSFET from NXP Semiconductors. It operates at 2.17 GHz with 22 dB gain and 28.8 dBm output power, supplied in a surface-mount PLD-1.5W package.
Mfr Part #:

AFT27S006NT1

Available from 4 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The AFT27S006NT1 is an RF LDMOS MOSFET from NXP Semiconductors. It operates at 2.17 GHz with 22 dB gain and 28.8 dBm output power, supplied in a surface-mount PLD-1.5W package.
✓ Total Stock: 8,291 pcs
$ Price Range: $13.45 - $20.61

AFT27S006NT1 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

AFT27S006NT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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AFT27S006NT1 Description

Short technical summary and product information.

The AFT27S006NT1 is an RF power transistor using LDMOS technology from NXP Semiconductors. It is designed for RF applications operating at a frequency of 2.17 GHz. The device provides a gain of 22 dB and delivers an output power of 28.8 dBm. It operates with a drain-source voltage of 28 V and a drain current of 70 mA.

 

This transistor is housed in a compact PLD-1.5W surface-mount package, making it suitable for automated assembly. The PLD-1.5W package is designed for RF power applications, offering low thermal resistance and high reliability.

 

The LDMOS technology ensures high efficiency and linearity for RF power amplification. Typical applications include wireless infrastructure, base stations, and other RF power amplifier stages requiring high gain and moderate power output. The device is specified for operation at 28 V, which is typical for LDMOS RF transistors. The 2.17 GHz frequency band is commonly used in cellular communications. The 22 dB gain simplifies driver stage design, and the 28.8 dBm output power is suitable for medium-power driver or final stages.

AFT27S006NT1 Quick Information

Product Type: RF MOSFET (LDMOS)
Series: AFT27S006N
Canonical Name: AFT27S006NT1
Subcategory: LDMOS

AFT27S006NT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: REACH Unaffected

AFT27S006NT1 Estimated Pricing

Qty Low High
1+ $20.61 $20.61
10+ $16.42 $16.42
25+ $15.37 $15.37
100+ $14.22 $14.22
250+ $13.67 $13.67
500+ $13.45 $13.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

AFT27S006NT1 Features

  • LDMOS technology for RF power amplification.
  • Operates at 2.17 GHz frequency.
  • 22 dB gain with 28.8 dBm output power.
  • Supports 28 V drain voltage at 70 mA.
  • Surface-mount PLD-1.5W package.

AFT27S006NT1 Applications

  • Ideal for RF power amplifier driver stages.
  • Used in wireless base station transmitters.
  • Suitable for medium-power RF applications.
  • Can be used in Class AB amplifier designs.
  • For 2.17 GHz cellular infrastructure.

AFT27S006NT1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the AFT27S006NT1?

The drain-source voltage is 28 V.

What package does the AFT27S006NT1 use?

The device comes in a surface-mount PLD-1.5W package.

Is the AFT27S006NT1 RoHS compliant?

RoHS compliance is indicated as RoHS3 compliant, but unverified.

What is the operating frequency of the AFT27S006NT1?

The operating frequency is 2.17 GHz.

What is the gain of the AFT27S006NT1?

The gain is 22 dB.

What is the output power of the AFT27S006NT1?

The output power is 28.8 dBm.

What is the drain current of the AFT27S006NT1?

The drain current is 70 mA.

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