| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The AFT26HW050SR3 is a dual-configuration LDMOS RF transistor manufactured by NXP Semiconductors. It operates at 2.69 GHz and provides a gain of 14.2 dB. The device is housed in a chassis-mount NI-780-4S4 package intended for RF power amplifier applications.
The LDMOS technology in this transistor supports high-efficiency and linear RF power amplification. The dual configuration enables balanced or push-pull circuit designs. Available specifications list a drain voltage of 28 V and a drain current of 100 mA, although source data contains conflicting values for voltage and output power.
Applications include RF power amplification in the 2.69 GHz band, where the NI-780-4S4 package provides a robust chassis-mounted solution for thermal and mechanical stability.
Designers should verify the exact electrical ratings and compliance status from the manufacturer before use.
| Qty | Low | High |
|---|---|---|
| 10+ | $55.48 | $55.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The listed drain voltage is 28 V, though the product introtext mentions 65 V. This parameter should be confirmed with the official datasheet.
The AFT26HW050SR3 is available in an NI-780-4S4 chassis-mount package.
It is listed as RoHS3 Compliant, but this status is unverified and carries low confidence.
The operating frequency is 2.69 GHz.
The gain is 14.2 dB.
The transistor uses LDMOS technology in a dual configuration.
The mounting type is chassis mount.