| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,010 pcs
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2010 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The AFT26H200W03SR6 is an RF LDMOS transistor manufactured by NXP Semiconductors. It operates at a frequency of 2.5 GHz and delivers 45W of output power with a gain of 14.1 dB. The device features a drain voltage rating of 28 V and a drain current of 500 mA.
This transistor is designed for RF power amplification applications. The LDMOS technology provides high efficiency and linearity for demanding RF designs.
The AFT26H200W03SR6 is packaged in a NI-1230-4S case style and is intended for chassis mount installation. The supplier device package is also NI-1230-4S.
The AFT26H200W03SR6 operates at 2.5 GHz.
The output power is 45 W.
The gain is 14.1 dB.
The package is NI-1230-4S, and the mounting type is chassis mount.
The drain voltage is 28 V.
The drain current is 500 mA.
The technology is LDMOS.