DistyParts Icon
AFT23H200-4S2LR6 The AFT23H200-4S2LR6 is an LDMOS RF FET from NXP Semiconductors. It offers a rated voltage of 65V and operates at frequencies up to 2.3GHz.
Mfr Part #:

AFT23H200-4S2LR6

Available from 1 distributors
Mfr Name: Freescale Semiconductor
Freescale Semiconductor
The AFT23H200-4S2LR6 is an LDMOS RF FET from NXP Semiconductors. It offers a rated voltage of 65V and operates at frequencies up to 2.3GHz.
✓ Total Stock: 1,300 pcs
$ Price Range: $0.99

AFT23H200-4S2LR6 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,300 pcs
On Request
1300 pcs On Request 1 On Request On Request 1526+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

AFT23H200-4S2LR6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Frequency
Gain
SVHC Present
Tape & Reel
Transistor Type
View Similar Products (0)

AFT23H200-4S2LR6 Description

Short technical summary and product information.

The AFT23H200-4S2LR6 is a dual LDMOS RF FET manufactured by NXP Semiconductors. This component is designed for RF applications, featuring a rated voltage of 65V and capable of operating at frequencies up to 2.3GHz.

 

Key electrical characteristics include an output power of 45W and a gain of 15.3dB. The device is tested at 28V and a current of 500mA. It is supplied in a Tape & Reel package, with the supplier device package identified as NI-1230-4LS2L.

 

This RF FET is suitable for various high-frequency applications where reliable performance and power handling are critical. Its LDMOS technology ensures efficient operation in demanding RF circuits.

AFT23H200-4S2LR6 Quick Information

Product Type: RF FET
Series: AFT23H200
Canonical Name: Freescale Semiconductor AFT23H200-4S2LR6 LDMOS RF FET
Subcategory: LDMOS

AFT23H200-4S2LR6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AFT23H200-4S2LR6 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

AFT23H200-4S2LR6 Features

  • 65V rated voltage for robust operation.
  • Operates at 2.3GHz frequency.
  • Provides 45W of output power.
  • Features 15.3dB gain.
  • LDMOS dual transistor type.

AFT23H200-4S2LR6 Applications

  • Ideal for RF power amplification.
  • Suitable for high-frequency circuits.
  • Used in communication systems.
  • Designed for demanding RF applications.

AFT23H200-4S2LR6 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the rated voltage for the AFT23H200-4S2LR6?

The rated voltage for the AFT23H200-4S2LR6 is 65V.

What is the operating frequency of the AFT23H200-4S2LR6?

The AFT23H200-4S2LR6 operates at a frequency of 2.3GHz.

What is the output power of the AFT23H200-4S2LR6?

The output power of the AFT23H200-4S2LR6 is 45W.

What is the gain of the AFT23H200-4S2LR6?

The gain of the AFT23H200-4S2LR6 is 15.3dB.

What type of transistor is the AFT23H200-4S2LR6?

The AFT23H200-4S2LR6 is an LDMOS (Dual) transistor type.

How is the AFT23H200-4S2LR6 packaged?

The AFT23H200-4S2LR6 is packaged in Tape & Reel (TR) in the NI-1230-4LS2L case.

Home

Categories