| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AFT21S140W02SR3 is an RF power LDMOS transistor from NXP Semiconductors. It operates at 2.14 GHz and delivers 32 watts of output power with a gain of 19.3 dB, at a test voltage of 28 V and a test current of 800 mA. The device is housed in a NI-780S package, which is designed for chassis mount installation, ensuring efficient heat dissipation for high-power operation.
This LDMOS technology provides high efficiency and linearity, making it suitable for RF power amplification in wireless infrastructure and communication systems. The transistor is RoHS3 compliant and has an MSL of 1 (unlimited), with REACH unaffected status. The mounting type is chassis mount, which simplifies thermal management in power amplifier designs.
The part is commonly used in base stations and other RF power amplifiers where high output power and reliability are required. The NI-780S package is a standard for high-power RF devices, offering robust mechanical and thermal performance.
| Qty | Low | High |
|---|---|---|
| 2+ | $168.09 | $168.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating frequency is 2.14 GHz.
The output power is 32 W.
The gain is 19.3 dB.
The test voltage is 28 V.
The package is NI-780S.
Yes, it is RoHS3 compliant.
The mounting type is chassis mount.