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AFT20S015NR1 AFT20S015NR1 is a 1.5W RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications from 1805 to 2700 MHz.
Mfr Part #:

AFT20S015NR1

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
AFT20S015NR1 is a 1.5W RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications from 1805 to 2700 MHz.
✓ Total Stock: 2,500 pcs
$ Price Range: $25.29 - $36.77

AFT20S015NR1 Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
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AFT20S015NR1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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AFT20S015NR1 Description

Short technical summary and product information.

The AFT20S015NR1 is an N-channel enhancement-mode lateral MOSFET from NXP Semiconductors, built using LDMOS technology. It delivers 1.5 W of average output power with 17.6 dB gain and 22.0% drain efficiency at 2140 MHz under single-carrier W-CDMA conditions.

 

This device operates at 28 V drain voltage with a quiescent current of 132 mA. It features a drain-source breakdown voltage of 65 V and a gate-source voltage range of -6.0 to +10 V. The transistor is designed for digital predistortion error correction systems and is optimized for Doherty applications.

 

The AFT20S015NR1 is housed in a TO-270AA plastic package with a surface mount TO-270-2 supplier device package. The backside of the package serves as the source terminal for the transistor. Operating junction temperature range is -40 to +225 °C.

AFT20S015NR1 Quick Information

Product Type: RF Power LDMOS Transistor
Canonical Name: AFT20S015NR1 RF Power LDMOS Transistor
Subcategory: Transistors - FETs, MOSFETs - RF

AFT20S015NR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3 (168 Hours)
REACH Status: REACH Unaffected

AFT20S015NR1 Estimated Pricing

Qty Low High
1+ $36.77 $36.77
10+ $29.83 $29.83
25+ $28.09 $28.09
100+ $26.18 $26.18
250+ $25.29 $25.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

AFT20S015NR1 Features

  • 1.5W average output power at 2140 MHz.
  • 17.6 dB gain at 2.17 GHz.
  • 28V drain voltage operation.
  • Surface mount TO-270-2 package.
  • Designed for Doherty applications.

AFT20S015NR1 Applications

  • Cellular base station RF power amplifiers.
  • W-CDMA single-carrier applications.
  • Digital predistortion error correction systems.
  • Doherty power amplifier designs.

AFT20S015NR1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the AFT20S015NR1?

The operating voltage (VDD) is 28 V DC, with a maximum rating of 32 V.

What package does the AFT20S015NR1 use?

It uses a TO-270AA plastic package with a surface mount TO-270-2 supplier device package.

What is the operating junction temperature range?

The operating junction temperature range is -40 to +225 °C.

What is the output power of the AFT20S015NR1?

The output power is 1.5 W average.

What is the gain of the AFT20S015NR1 at 2.17 GHz?

The gain is 17.6 dB at 2.17 GHz.

What is the frequency range for the AFT20S015NR1?

The device is designed for the frequency range of 1805 to 2700 MHz.

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