| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18,000 pcs
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18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,731 pcs
|
1731 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
892 pcs
|
892 pcs | On Request | 1 | On Request | On Request | 1741+ | On Request | On Request |
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The AFT20P140-4WNR3 is a dual LDMOS RF power field-effect transistor from NXP Semiconductors, designed for high-frequency applications in the 1.88 GHz to 1.91 GHz range. It operates at a nominal drain voltage of 28 V and a test current of 500 mA, delivering a typical output power of 24 W with a gain of 17.8 dB. This device is suitable for use in wireless infrastructure and other RF power amplification circuits. It is housed in an OM-780-4L surface-mount package, enabling compact PCB designs. The part is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
The nominal drain voltage is 28 V.
The device is housed in an OM-780-4L surface-mount package.
It operates from 1.88 GHz to 1.91 GHz.
The typical gain is 17.8 dB.
The nominal output power is 24 W.
The part is listed as RoHS3 compliant, but this status is unverified.
It is a dual LDMOS configuration.