| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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55 pcs
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55 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AFT20P060-4NR3 from NXP Semiconductors is a dual LDMOS RF MOSFET. This component is designed for RF applications, operating at a frequency of 2.17GHz with a rated voltage of 65V and a test voltage of 28V.
Key electrical characteristics include an output power of 60W and a gain of 18.9dB. The device is configured as 2 N-Channel MOSFETs and utilizes LDMOS technology. It is rated for a test current of 450mA.
This RF MOSFET is available in a surface mount package, specifically the OM-780-4L case style. Its robust specifications make it suitable for various RF power amplification designs.
Compliance information indicates RoHS3 compliance, an MSL rating of 1, and REACH unaffected status. However, these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The output power is 60W.
The operating frequency is 2.17GHz.
The test voltage is 28V.
It is in a surface mount OM-780-4L package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.