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AFT20P060-4NR3 AFT20P060-4NR3 is a dual LDMOS RF MOSFET from NXP Semiconductors. It operates at 2.17 GHz with 18.9 dB gain, 28 V drain voltage, and 6.3 W output power in an OM-780-4L surface-mount package.
Mfr Part #:

AFT20P060-4NR3

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
AFT20P060-4NR3 is a dual LDMOS RF MOSFET from NXP Semiconductors. It operates at 2.17 GHz with 18.9 dB gain, 28 V drain voltage, and 6.3 W output power in an OM-780-4L surface-mount package.
✓ Total Stock: 22,000 pcs
$ Price Range: $43.04

AFT20P060-4NR3 Available from 1 distributor

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22,000 pcs
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AFT20P060-4NR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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AFT20P060-4NR3 Description

Short technical summary and product information.

The AFT20P060-4NR3 is a dual LDMOS RF MOSFET manufactured by NXP Semiconductors. It is designed for RF power amplification at 2.17 GHz and is housed in an OM-780-4L surface-mount package. The device uses LDMOS technology and features a dual configuration suitable for balanced or push-pull amplifier designs.

 

Electrical characteristics include a gain of 18.9 dB, a drain-source voltage rating of 28 V, and a drain current of 450 mA. The output power is specified at 6.3 W. These parameters make it appropriate for RF driver or intermediate power stages in the 2.17 GHz band.

 

The component is mounted using surface-mount technology, facilitating automated assembly. The OM-780-4L package is a compact RF power transistor package. The dual configuration allows for design flexibility in differential or quadrature amplifier topologies. As with all RF power devices, proper thermal management and impedance matching are essential for reliable operation.

AFT20P060-4NR3 Quick Information

Product Type: RF MOSFET
Canonical Name: AFT20P060-4NR3 Dual LDMOS RF MOSFET
Subcategory: LDMOS Transistor

AFT20P060-4NR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AFT20P060-4NR3 Estimated Pricing

Qty Low High
7+ $43.04 $43.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

AFT20P060-4NR3 Features

  • Dual LDMOS RF power transistor configuration.
  • Operates at 2.17 GHz frequency.
  • Provides 18.9 dB gain.
  • Rated for 28 V drain-source voltage.
  • Surface-mount OM-780-4L package.

AFT20P060-4NR3 Applications

  • Designed for 2.17 GHz RF amplification.
  • Suitable for dual-transistor amplifier designs.
  • Can be used in surface-mount RF modules.
  • Applicable for LDMOS-based RF power circuits.

AFT20P060-4NR3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the AFT20P060-4NR3?

The drain-source voltage is rated at 28 V.

What package is the AFT20P060-4NR3 available in?

It comes in an OM-780-4L surface-mount package.

Is the AFT20P060-4NR3 RoHS compliant?

It is listed as RoHS3 compliant, but this status is unverified.

What is the gain of the AFT20P060-4NR3?

The gain is 18.9 dB.

What is the output power of the AFT20P060-4NR3?

The output power is 6.3 W.

What operating frequency is the AFT20P060-4NR3 designed for?

It is designed for 2.17 GHz.

Does the AFT20P060-4NR3 have a dual configuration?

Yes, it has a dual (two-channel) configuration.

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