| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AFT20P060-4GNR3 is a dual LDMOS RF power transistor manufactured by NXP Semiconductors. It is designed for RF power amplification in the 2.17 GHz frequency band.
Key electrical specifications: it operates with a drain voltage of 28 V and a quiescent current of 450 mA, providing a typical gain of 18.9 dB and an output power of 6.3 W. The dual configuration allows for push-pull or balanced amplifier designs.
The transistor is housed in a surface-mount OM-780G-4L package, suitable for automated assembly. The package is designed for high-frequency performance and thermal management.
The operating voltage is 28 V.
It is available in a surface mount OM-780G-4L package.
The device is listed as RoHS3 compliant, but this status is unverified.
The operating frequency is 2.17 GHz.
The gain is 18.9 dB.
The output power is 6.3 W.
The device has a dual configuration.