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750 pcs
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750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AFT18S230SR5 is an RF MOSFET transistor from NXP Semiconductors, utilizing LDMOS technology for high-efficiency RF power amplification. It delivers a nominal output power of 50 W with a gain of 19 dB at an operating frequency of 1.88 GHz. The device operates with a drain-source voltage of 28 V and a drain current of 1.8 A.
This transistor is designed for surface mount assembly in the NI-780S-6 package, which is a compact and thermally efficient enclosure suitable for high-frequency applications. The LDMOS construction provides excellent linearity and ruggedness for demanding RF environments.
Typical applications include RF power amplifiers for wireless infrastructure, broadcast transmitters, and industrial RF energy systems. The 28 V operation aligns with standard RF power supply rails, simplifying system design.
| Qty | Low | High |
|---|---|---|
| 1+ | $170.96 | $170.96 |
| 10+ | $144.87 | $144.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating frequency is 1.88 GHz.
The output power is 50 W.
The gain is 19 dB.
The drain-source voltage is 28 V.
It uses the NI-780S-6 surface mount package.
RoHS3 compliance is indicated but unverified.
The MSL is Level 1, indicating unlimited floor life, but this is unverified.