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750 pcs
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750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AFT18S230SR3 is an RF power LDMOS transistor designed by NXP Semiconductors for high-frequency applications. It delivers 50W of output power with a gain of 19dB at a frequency of 1.88GHz, operating from a 28V supply voltage and drawing 1.8A of current.
The device uses LDMOS technology, which provides high efficiency and linearity for RF power amplification. It is packaged in a chassis-mount NI-780S package, suitable for thermal management in high-power RF designs.
This transistor is intended for use in RF power amplifier stages in applications such as wireless infrastructure, industrial RF heating, and other high-frequency power systems. The NI-780S package supports reliable mounting and heat dissipation.
| Qty | Low | High |
|---|---|---|
| 250+ | $33.56 | $33.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AFT18S230SR3 delivers 50W of RF output power.
The gain is 19dB.
The operating frequency is 1.88GHz.
The supply voltage is 28V.
The AFT18S230SR3 is available in a chassis-mount NI-780S package.
The AFT18S230SR3 uses LDMOS technology.