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AFT18P350-4S2LR6 The AFT18P350-4S2LR6 is a dual LDMOS RF MOSFET from NXP Semiconductors, designed for 1.81 GHz operation with 63 W output power and 16.1 dB gain. It operates at 28 V drain-source voltage and comes in a chassis-mount NI-1230-4LS2L package.
Mfr Part #:

AFT18P350-4S2LR6

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The AFT18P350-4S2LR6 is a dual LDMOS RF MOSFET from NXP Semiconductors, designed for 1.81 GHz operation with 63 W output power and 16.1 dB gain. It operates at 28 V drain-source voltage and comes in a chassis-mount NI-1230-4LS2L package.
✓ Total Stock: 150 pcs
$ Price Range: $278.31

AFT18P350-4S2LR6 Available from 1 distributor

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✓ Non-Authorised
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150 pcs
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DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

AFT18P350-4S2LR6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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AFT18P350-4S2LR6 Description

Short technical summary and product information.

The AFT18P350-4S2LR6 is a dual LDMOS RF power transistor from NXP Semiconductors, engineered for high-frequency amplification in the 1.81 GHz band. It delivers 63 W of output power with a gain of 16.1 dB, making it suitable for RF power amplifier stages in communication systems.

 

This device operates with a drain-source voltage of 28 V and a drain current of 1 A, reflecting its design for efficient RF power delivery. The LDMOS technology provides reliable performance in demanding RF applications.

 

The transistor is housed in an NI-1230-4LS2L package and is designed for chassis mounting, facilitating heat dissipation and mechanical stability in power amplifier assemblies. Its dual configuration supports balanced or push-pull circuit topologies.

AFT18P350-4S2LR6 Quick Information

Product Type: RF MOSFET Transistor
Series: AIRFAST
Canonical Name: RF MOSFET LDMOS Dual 28V 63W 1.81GHz
Subcategory: Transistors - FETs, MOSFETs - RF

AFT18P350-4S2LR6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AFT18P350-4S2LR6 Estimated Pricing

Qty Low High
5+ $278.31 $278.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

AFT18P350-4S2LR6 Features

  • Dual LDMOS RF power transistor.
  • 63 W output power at 1.81 GHz.
  • 16.1 dB gain at 1.81 GHz.
  • 28 V drain-source voltage rating.
  • Chassis mount NI-1230-4LS2L package.

AFT18P350-4S2LR6 Applications

  • RF power amplifier for 1.8 GHz band.
  • Base station transmitter output stages.
  • Industrial RF heating and plasma systems.
  • Amplifier stages in communication equipment.

AFT18P350-4S2LR6 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the output power of the AFT18P350-4S2LR6?

The output power is 63 W.

What is the operating frequency of this RF MOSFET?

The operating frequency is 1.81 GHz.

What is the gain of the AFT18P350-4S2LR6?

The gain is 16.1 dB.

What is the drain-source voltage rating?

The drain-source voltage rating is 28 V.

What package is the AFT18P350-4S2LR6 available in?

It is available in the NI-1230-4LS2L package.

Is the AFT18P350-4S2LR6 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

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