| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,101 pcs
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3101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,111 pcs
|
2111 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The AFT18H357-24SR6 is a dual LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power transistor from NXP Semiconductors. It operates at a drain voltage of 28 V and provides an output power of 63 W at a frequency of 1.81 GHz with a gain of 17.3 dB. The drain current is rated at 800 mA.
This transistor is configured as a dual device, meaning it contains two independent LDMOS transistors in a single package. It is designed for RF power amplifier applications in the 1.8 GHz band, such as cellular base stations or other industrial RF systems.
The device is mounted using chassis mount style and is encapsulated in an NI-1230-4LS2L package, which provides robust thermal and electrical performance for high-power RF applications. The package is a 4-lead, 2-stud type suitable for bolting to a heat sink.
28V drain voltage.
NI-1230-4LS2L chassis mount package.
Yes, RoHS3 compliant (unverified).
1.81 GHz.
17.3 dB.
63 W.
Dual configuration.