| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,359 pcs
|
3359 pcs | On Request | 1 | On Request | On Request | 18+/19+ | On Request | On Request | |
|
2,630 pcs
|
2630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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| Voltage |
The AFT09S282NR3 from NXP Semiconductors is a 28V LDMOS RF power transistor designed for high-power applications up to 960MHz. It provides a typical gain of 20dB and delivers 80W of output power with a supply current of 1.4A. The device uses LDMOS technology for high efficiency and linearity. It is housed in an OM-780-2 surface mount package. The AFT09S282NR3 is RoHS3 compliant, has an MSL of 1 (unlimited), and is REACH unaffected. Ideal for RF power amplification in wireless infrastructure and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.63 | $2.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AFT09S282NR3 operates at a rated voltage of 28V.
The output power is 80W.
The typical gain is 20dB.
The device is specified for 960MHz operation.
The package is OM-780-2 for surface mount applications.
Yes, it is listed as RoHS3 compliant.
The MSL rating is 1 (unlimited).