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AFT09MS015NT1 RF MOSFET LDMOS transistor from NXP Semiconductors. Features 12.5V drain-source voltage, 16W output power, 870MHz frequency, 17.2dB gain, in surface mount PLD-1.5W package.
Mfr Part #:

AFT09MS015NT1

Available from 3 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
RF MOSFET LDMOS transistor from NXP Semiconductors. Features 12.5V drain-source voltage, 16W output power, 870MHz frequency, 17.2dB gain, in surface mount PLD-1.5W package.
✓ Total Stock: 1,050 pcs
$ Price Range: $6.07 - $9.94

AFT09MS015NT1 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Trace Tec ✓
Non-Authorised Inventory information
45 pcs
On Request
45 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
5 pcs
On Request
5 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

AFT09MS015NT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Mounting Type
Power
Supplier Device Package
Tape & Reel
Technology
Voltage
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AFT09MS015NT1 Description

Short technical summary and product information.

The AFT09MS015NT1 is an RF LDMOS field-effect transistor manufactured by NXP Semiconductors. It is designed for RF power amplification applications in the 870 MHz frequency band. Key electrical characteristics include a drain-source voltage rating of 12.5 V, a drain current of 100 mA, an output power of 16 W, and a gain of 17.2 dB. The device utilizes LDMOS technology, which offers high efficiency and linearity for wireless infrastructure applications.

 

This transistor is housed in a PLD-1.5W surface-mount package, enabling compact board layouts. The PLD-1.5W package is designed for high-frequency operation and provides good thermal performance. The component is rated with Moisture Sensitivity Level 1 (unlimited) and is RoHS3 compliant (unverified). Surface mount mounting allows for automated assembly processes.

 

While no datasheet is linked for detailed application circuits, the specified parameters suggest suitability for narrowband RF power amplifier stages operating at 870 MHz. The LDMOS technology is commonly used in base station and mobile radio transmitter final stages.

AFT09MS015NT1 Quick Information

Product Type: RF MOSFET Transistor
Canonical Name: RF MOSFET LDMOS 12.5V 16W 870MHz PLD-1.5W Surface Mount
Subcategory: RF MOSFET LDMOS

AFT09MS015NT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: REACH Unaffected

AFT09MS015NT1 Estimated Pricing

Qty Low High
1+ $9.94 $9.94
1,000+ $6.07 $6.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

AFT09MS015NT1 Features

  • LDMOS technology for RF power amplification.
  • 16W output power at 870 MHz.
  • 17.2 dB gain at 870 MHz.
  • 12.5V drain-source voltage rating.
  • Surface mount PLD-1.5W package.

AFT09MS015NT1 Applications

  • Ideal for 870 MHz RF power amplifier circuits.
  • Used in mobile radio transmitter final stages.
  • Suitable for wireless base station infrastructure.
  • Applicable in narrowband high-frequency amplification.

AFT09MS015NT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of this transistor?

The drain-source voltage is 12.5 V.

What is the package type?

The package type is PLD-1.5W surface mount.

Is this component RoHS compliant?

The component is listed as RoHS3 Compliant, but this status is unverified.

What is the gain of the AFT09MS015NT1?

The gain is 17.2 dB.

What is the output power?

The output power is 16 W.

What frequency range does this transistor operate at?

The frequency is 870 MHz.

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