| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AFT09H310-04GSR6 is an N-Channel RF power MOSFET manufactured by NXP Semiconductors. It is designed for RF applications operating at 920 MHz, delivering a gain of 17.9 dB. The device supports a drain-source voltage of 28 V and a drain current of 680 mA, with a maximum power dissipation of 56 W.
This MOSFET is housed in a NI-1230S-4 GW package with a NI-1230S-4 GULL supplier device package variant, featuring chassis mount for secure installation in RF power amplifier stages. The part is RoHS3 compliant and has an MSL of 1 (unlimited), suitable for high-reliability environments.
Typical applications include RF power amplification in wireless infrastructure, broadcast transmitters, and industrial RF generators where high gain and efficiency at UHF frequencies are required.
The AFT09H310-04GSR6 operates at 920 MHz.
The gain is 17.9 dB at 920 MHz.
The maximum power dissipation is 56 W.
It uses a NI-1230S-4 GW package with a NI-1230S-4 GULL supplier device package, chassis mount.
Yes, it is listed as RoHS3 Compliant (unverified).
The drain-source voltage rating is 28 V.
The drain current is 680 mA.