| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,597 pcs
|
2597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
44 pcs
|
44 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The AFT05MS004NT1 is an LDMOS RF power field-effect transistor from NXP Semiconductors. It operates at 520 MHz with a gain of 20.9 dB and delivers 4.9 W of output power. Key specifications include a drain current of 100 mA and a drain-source voltage of 7.5 V.
This surface-mount device uses LDMOS technology and comes in a TO-243AA package, with the supplier device package listed as SOT-89A. The small SOT-89A format is well suited for compact RF circuits and automated assembly processes.
Given its 520 MHz operating frequency and 4.9 W output power, the AFT05MS004NT1 is appropriate for RF power amplifier applications in that frequency band. The 20.9 dB gain supports signal amplification in transmitter front-ends.
The transistor is marked as RoHS3 compliant, supporting lead-free manufacturing requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.40 | $5.40 |
| 10+ | $3.52 | $3.52 |
| 25+ | $3.09 | $3.09 |
| 50+ | $2.92 | $2.92 |
| 100+ | $2.76 | $2.76 |
| 250+ | $2.51 | $2.51 |
| 500+ | $2.31 | $2.31 |
| 1,000+ | $2.17 | $2.17 |
| 2,000+ | $2.12 | $2.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
520 MHz.
20.9 dB.
4.9 W.
LDMOS (Laterally Diffused Metal-Oxide Semiconductor).
7.5 V.
Surface-mount TO-243AA package, also designated as SOT-89A.
RoHS3 Compliant.