AFM906NT1 AFM906NT1 is a high ruggedness RF power LDMOS transistor designed for handheld two-way radio applications from 136 to 941 MHz. It delivers up to 6.5W output power with 16.2dB gain at 7.5V.
Mfr Part #:

AFM906NT1

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
AFM906NT1 is a high ruggedness RF power LDMOS transistor designed for handheld two-way radio applications from 136 to 941 MHz. It delivers up to 6.5W output power with 16.2dB gain at 7.5V.
✓ Total Stock: 21,000 pcs
$ Price Range: $2.04 - $3.71

AFM906NT1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
21,000 pcs
21000 pcs On Request 1 On Request On Request On Request On Request On Request

AFM906NT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Rating (Amps)
Frequency
Mounting Type
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Voltage

AFM906NT1 Description

Short technical summary and product information.

The AFM906NT1 is an RF power LDMOS transistor from NXP Semiconductors, designed for handheld two-way radio applications. It operates across a wide frequency range from 136 to 941 MHz, making it suitable for VHF, UHF, and 700-800 MHz bands.

 

At 7.5 Vdc typical operating voltage, the device provides 6.5 W output power with 16.2 dB power gain and 62.0% drain efficiency across 440-520 MHz. In narrowband 520 MHz test conditions, it achieves 6.8 W output, 20.3 dB gain, and 70.8% efficiency. The transistor features integrated ESD protection (Class 1C HBM) and exceptional ruggedness, surviving >65:1 VSWR at all phase angles.

 

The device is housed in a 16-VDFN exposed pad package (16-DFN 4x6 mm) with surface mount mounting. The exposed backside serves as the source terminal for thermal management. Maximum drain-source voltage is 30 V, gate-source voltage is 12 V, and total device dissipation is 65.8 W at 25°C case temperature.

 

Typical applications include output stages for VHF and UHF handheld radios, 700-800 MHz handheld radios, and as a generic 6 W driver for ISM and broadcast final stage transistors. The device is characterized for operation from 136 to 941 MHz and is unmatched input and output for wide frequency range utilization.

AFM906NT1 Quick Information

Product Type: RF Power LDMOS Transistor
Series: AFM906
Canonical Name: NXP AFM906NT1 RF Power LDMOS Transistor
Subcategory: LDMOS RF Power Transistors

AFM906NT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AFM906NT1 Estimated Pricing

Qty Low High
1+ $3.71 $3.71
10+ $2.79 $2.79
25+ $2.56 $2.56
100+ $2.31 $2.31
250+ $2.19 $2.19
500+ $2.11 $2.11
1,000+ $2.04 $2.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

AFM906NT1 Features

  • Wideband operation from 136 to 941 MHz.
  • 6.5 W output power at 7.5 V typical.
  • High drain efficiency up to 70.8%.
  • Integrated ESD protection Class 1C.
  • Surface mount 16-DFN package.

AFM906NT1 Applications

  • Output stage for VHF handheld radios.
  • Output stage for UHF handheld radios.
  • Output stage for 700-800 MHz radios.
  • Generic 6 W driver for ISM applications.

AFM906NT1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the typical operating voltage of the AFM906NT1?

The typical operating voltage is 7.5 Vdc.

What package does the AFM906NT1 come in?

It comes in a 16-VDFN Exposed Pad package (16-DFN 4x6 mm) for surface mount mounting.

What is the operating temperature range of the AFM906NT1?

The operating junction temperature range is -40 to +150 °C, and storage temperature range is -65 to +150 °C.

Is the AFM906NT1 RoHS compliant?

The device is listed as RoHS3 Compliant, but this status is unverified.

What is the output power of the AFM906NT1?

Typical output power is 6.5 W across 440-520 MHz and 6.8 W at 520 MHz.

What is the power gain of the AFM906NT1?

Typical power gain is 16.2 dB across 440-520 MHz and 20.3 dB at 520 MHz.

What is the drain efficiency of the AFM906NT1?

Typical drain efficiency is 62.0% across 440-520 MHz and 70.8% at 520 MHz.

Home
Account

Categories