| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,700 pcs
|
2700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The AFGHL75T65SQDC from On Semiconductor is a 650V, 75A Trench Field Stop IGBT utilizing 4th generation technology combined with a 1.5th generation SiC Schottky diode. This hybrid device delivers low conduction and switching losses, making it ideal for high-efficiency power conversion. Key electrical ratings include a maximum collector-to-emitter voltage of 650V, continuous collector current of 80A at 25°C (75A at 100°C), and a pulsed collector current capability of 300A. The typical saturation voltage is 1.6V at 75A and 15V gate drive. The integrated SiC diode exhibits no reverse recovery, further reducing losses. The device is housed in a TO-247-3 through-hole package with a maximum junction temperature of 175°C. Thermal resistance junction-to-case is 0.4°C/W for the IGBT and 1.55°C/W for the diode. Typical applications include automotive on-board and off-board chargers, DC-DC converters, power factor correction (PFC) circuits, and industrial inverters, especially totem-pole bridgeless PFC topologies.
| Qty | Low | High |
|---|---|---|
| 1+ | $11.47 | $11.47 |
| 10+ | $7.20 | $7.20 |
| 120+ | $5.89 | $5.89 |
| 510+ | $5.43 | $5.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCES) is 650V.
The maximum continuous collector current is 80A at case temperature 25°C and 75A at 100°C. Pulsed current capability is 300A.
It is available in a TO-247-3 through-hole package.
The typical collector-to-emitter saturation voltage is 1.6V at VGE=15V and IC=75A, with a maximum of 2.1V.
The maximum junction temperature is 175°C.
Yes, it features a co-packaged 1.5th generation SiC Schottky diode with no reverse recovery and no forward recovery.
The gate charge is 139 nC.