AFGHL75T65SQ The AFGHL75T65SQ is a 650V, 80A Trench Field Stop IGBT with a SiC copack diode from On Semiconductor. It is housed in a TO-247-3 through-hole package.
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AFGHL75T65SQ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The AFGHL75T65SQ is a 650V, 80A Trench Field Stop IGBT with a SiC copack diode from On Semiconductor. It is housed in a TO-247-3 through-hole package.
Total Stock: 13,500 pcs
$ Price Range: $2.62 - $6.54

AFGHL75T65SQ Available from 1 distributor

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AFGHL75T65SQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Gate Charge
IGBT Type
Input Type
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Switching Energy
Switching Energy (off) (Eoff)
Td (on
Test Condition
Turn-Off Delay Time (td(off))
Vce(on) (Max) @ Vge, Ic
Voltage

AFGHL75T65SQ Description

Short technical summary and product information.

The AFGHL75T65SQ is a single IGBT with a SiC copack diode manufactured by On Semiconductor. It utilizes Trench Field Stop technology and is rated for a collector-emitter voltage of 650 V and a continuous collector current of 80 A. The device can dissipate up to 375 W and has a typical gate charge of 139 nC. Switching characteristics include a typical turn-on delay time of 25 ns and a turn-off delay time of 106 ns, with switching energies of 1.86 mJ (on) and 1.13 mJ (off) under test conditions of 400V, 75A, and 15V gate drive.

 

This IGBT is designed for through-hole mounting in a TO-247-3 package. It operates over a junction temperature range of -55°C to 175°C. The part is suitable for applications requiring high efficiency and fast switching, such as power inverters and motor drives.

AFGHL75T65SQ Quick Information

Product Type: IGBT with SiC Copack Diode
Canonical Name: AFGHL75T65SQ IGBT with SiC Copack Diode
Subcategory: Single IGBT with Copack Diode

AFGHL75T65SQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AFGHL75T65SQ Estimated Pricing

Qty Low High
1+ $6.54 $6.54
30+ $3.74 $3.74
120+ $3.12 $3.12
510+ $2.67 $2.67
1,020+ $2.62 $2.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

AFGHL75T65SQ Features

  • 650V collector-emitter voltage rating.
  • 80A continuous collector current capability.
  • Trench Field Stop IGBT technology.
  • SiC copack diode for improved switching.
  • TO-247-3 through-hole package.

AFGHL75T65SQ Applications

  • Used in high-power inverter circuits.
  • Suitable for motor drive applications.
  • Ideal for power supply and UPS systems.
  • Applicable in industrial welding equipment.

AFGHL75T65SQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the AFGHL75T65SQ?

The maximum collector-emitter voltage (Vces) is 650 V.

What is the continuous collector current rating?

The continuous collector current (Ic) is 80 A.

What is the power dissipation of this IGBT?

The power dissipation (Pd) is 375 W.

What is the package type for the AFGHL75T65SQ?

The package is TO-247-3 with through-hole mounting.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 175°C.

What IGBT technology is used in this device?

The device uses Trench Field Stop technology.

What is the typical gate charge of the AFGHL75T65SQ?

The typical gate charge (Qg) is 139 nC.

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