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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,500 pcs
|
13500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) (Eoff) | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time (td(off)) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The AFGHL75T65SQ is a single IGBT with a SiC copack diode manufactured by On Semiconductor. It utilizes Trench Field Stop technology and is rated for a collector-emitter voltage of 650 V and a continuous collector current of 80 A. The device can dissipate up to 375 W and has a typical gate charge of 139 nC. Switching characteristics include a typical turn-on delay time of 25 ns and a turn-off delay time of 106 ns, with switching energies of 1.86 mJ (on) and 1.13 mJ (off) under test conditions of 400V, 75A, and 15V gate drive.
This IGBT is designed for through-hole mounting in a TO-247-3 package. It operates over a junction temperature range of -55°C to 175°C. The part is suitable for applications requiring high efficiency and fast switching, such as power inverters and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.54 | $6.54 |
| 30+ | $3.74 | $3.74 |
| 120+ | $3.12 | $3.12 |
| 510+ | $2.67 | $2.67 |
| 1,020+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vces) is 650 V.
The continuous collector current (Ic) is 80 A.
The power dissipation (Pd) is 375 W.
The package is TO-247-3 with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
The device uses Trench Field Stop technology.
The typical gate charge (Qg) is 139 nC.