AFGHL40T65SQD The AFGHL40T65SQD is a 650V, 40A Field Stop Trench IGBT from onsemi, AEC-Q101 qualified for automotive applications. It features low saturation voltage (1.6V typical) and fast switching performance.
Mfr Part #:

AFGHL40T65SQD

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The AFGHL40T65SQD is a 650V, 40A Field Stop Trench IGBT from onsemi, AEC-Q101 qualified for automotive applications. It features low saturation voltage (1.6V typical) and fast switching performance.
✓ Total Stock: 11,250 pcs
$ Price Range: $2.97 - $7.19

AFGHL40T65SQD Available from 1 distributor

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✓ Non-Authorised
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AFGHL40T65SQD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Gate Charge
IGBT Type
Input Type
Lead Style
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
SVHC Present
Storage Temperature
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

AFGHL40T65SQD Description

Short technical summary and product information.

The AFGHL40T65SQD is a Field Stop Trench IGBT from onsemi, designed for high-speed switching in automotive applications. It is AEC-Q101 qualified and RoHS compliant. The device integrates a fast recovery diode.

 

Key electrical specifications include a collector-to-emitter breakdown voltage of 650V, continuous collector current of 80A at 25°C (40A at 100°C), and pulsed current capability up to 160A. Typical saturation voltage is 1.6V at 40A with 15V gate drive. Gate charge is 68 nC. Switching energy is 250 µJ (on) and 90 µJ (off) at 400V, 20A, 6Ω gate resistance.

 

Maximum junction temperature is 175°C. Power dissipation is 238W at 25°C case temperature. Thermal resistance junction-to-case is 0.63°C/W for the IGBT and 1.71°C/W for the diode. The device is housed in a TO-247-3 package (through-hole mounting), suitable for high-power designs.

 

Typical applications include automotive HEV-EV onboard chargers, DC-DC converters, totem pole bridgeless PFC, and PTC heaters. The positive temperature coefficient facilitates easy parallel operation.

AFGHL40T65SQD Quick Information

Product Type: IGBT - Single
Series: AFGHL40T65SQD
Canonical Name: AFGHL40T65SQD Field Stop Trench IGBT
Subcategory: Single IGBT

AFGHL40T65SQD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AFGHL40T65SQD Estimated Pricing

Qty Low High
1+ $7.19 $7.19
10+ $3.83 $3.83
120+ $3.21 $3.21
510+ $2.97 $2.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

AFGHL40T65SQD Features

  • AEC-Q101 qualified for automotive applications.
  • 650V collector-to-emitter breakdown voltage.
  • 80A continuous collector current at 25°C.
  • Low saturation voltage of 1.6V typical.
  • Fast switching with 68 nC gate charge.

AFGHL40T65SQD Applications

  • Automotive HEV-EV onboard chargers.
  • Automotive HEV-EV DC-DC converters.
  • Totem pole bridgeless PFC circuits.
  • PTC heater applications.
  • High-speed switching power supplies.

AFGHL40T65SQD FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the AFGHL40T65SQD?

The collector-to-emitter breakdown voltage is 650V minimum.

What package is the AFGHL40T65SQD available in?

The device is housed in a TO-247-3 package (through-hole).

What is the operating temperature range?

The junction and storage temperature range is -55°C to +175°C.

Is the AFGHL40T65SQD RoHS compliant?

Yes, it is RoHS3 compliant as per the datasheet.

What is the maximum collector current?

The maximum continuous collector current is 80A at TC=25°C and 40A at TC=100°C. Pulsed current up to 160A.

What is the typical saturation voltage?

The typical collector-to-emitter saturation voltage is 1.6V at IC=40A, VGE=15V, TJ=25°C.

Is the device AEC-Q101 qualified?

Yes, the AFGHL40T65SQD is AEC-Q101 qualified for automotive applications.

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