| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Gate Charge | |
| Halogen Free | |
| IGBT Type | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The AFGHL40T120RHD is an Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, designed for automotive applications. It utilizes advanced Field Stop II Trench construction to deliver low on-state voltage (typically 2.0V) and minimal switching losses.
Key electrical specs include a maximum collector-emitter voltage of 1200V, collector current of 48A at 25°C (40A at 100°C), and pulse current handling up to 160A. The device is rated for a maximum junction temperature of 175°C and offers a short circuit withstand time of 9 µs.
The IGBT is housed in a TO-247-3 through-hole package. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. The part is AEC-Q101 qualified and PPAP capable, making it suitable for demanding automotive environments.
The maximum collector-emitter voltage (VCES) is 1200V.
The IGBT is housed in a TO-247-3 through-hole package.
Yes, the AFGHL40T120RHD is RoHS compliant and also Pb-Free and Halogen Free/BFR Free.
The junction temperature range is -55°C to 175°C.
The typical VCE(sat) is 2.0V.
Yes, it is AEC-Q101 qualified and PPAP capable.