AFGB40T65SQDN

The AFGB40T65SQDN is a 650V, 40A IGBT designed for automotive applications, manufactured by onsemi. It is offered in a D2PAK-3 (TO-263-3) surface mount package and is part of the high-speed switching series. The device features a maximum junction temperature of 175°C, a collector-emitter saturation voltage of 1.6V typical at 40A, and a pulsed collector current rating of 160A. It is AEC-Q101 qualified, ensuring suitability for automotive environments.

Electrical characteristics include a collector-emitter voltage rating of 650V, a gate-emitter voltage of ±20V (transient up to ±30V), and a maximum power dissipation of 238W at TC=25°C. The collector current is rated at 80A at 25°C and 40A at 100°C. The integrated anti-parallel diode supports forward currents of 40A at 25°C and 20A at 100°C, with a pulsed diode current of 160A. The device also specifies switching energies of 858µJ (on) and 229µJ (off) under test conditions of 400V, 40A, and 6Ω gate resistance.

This IGBT is intended for use in automotive on-board chargers and DC/DC converters for hybrid electric vehicles (HEVs). The D2PAK package is designed for surface mounting and is available in tape and reel packaging with 800 units per reel. The device is Pb-Free and RoHS compliant, as stated in the datasheet.

The operating junction temperature range is -55°C to 175°C, with a storage temperature range of the same. Thermal resistance junction-to-case is 0.63°C/W for the IGBT and 1.55°C/W for the diode, while junction-to-ambient is 40°C/W. These parameters are critical for thermal management in power conversion applications.