| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,035 pcs
|
1035 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Collector Cut-Off Current | |
| Collector-to-Emitter Saturation Voltage (Typical @ IC=30A) | |
| Current | |
| Gate Charge | |
| Gate-Emitter Leakage Current | |
| Gate-to-Emitter Voltage (VGES) | |
| Input Type | |
| Lead Style | |
| Maximum Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Pulsed Collector Current | |
| Pulsed Diode Maximum Forward Current | |
| Reverse Recovery Time (trr) | |
| Standard Package Qty | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Td (on | |
| Temperature Coefficient of Breakdown Voltage | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance Junction-to-Case (Diode) | |
| Thermal Resistance Junction-to-Case (IGBT) | |
| Transient Gate-to-Emitter Voltage | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| collector_current (Maximum @ TC=100 °C) | |
| diode_forward_current (Maximum @ TC=100 °C) | |
| diode_forward_current (Maximum @ TC=25 °C) | |
| power_dissipation (Maximum @ TC=100 °C) |
AFGB30T65SQDN is a 650 V, 30 A insulated gate bipolar transistor (IGBT) designed for automotive applications. It is qualified to AEC-Q101 and belongs to onsemi's high speed switching series. The device integrates a low VF soft recovery co-packaged diode, making it suitable for power conversion stages with inductive loads.
The IGBT features a maximum collector-to-emitter voltage of 650 V and a collector current rating of 60 A at 25°C case temperature (30 A at 100°C). Pulsed collector current is rated at 120 A. Typical collector-to-emitter saturation voltage is 1.6 V at 30 A, with a maximum of 2.1 V at 15 V gate drive. Maximum power dissipation is 220 W at 25°C and 110 W at 100°C. The device can operate with junction temperatures up to 175°C and has a transient gate-to-emitter voltage rating of ±30 V.
The AFGB30T65SQDN is supplied in the D2PAK-3 (TO-263-3) surface-mount package with tape and reel packaging of 800 units. This package is well suited for automotive on-board charger and DC-DC converter HEV applications. Thermal resistance junction-to-case is 0.68 °C/W for the IGBT and 1.55 °C/W for the co-packaged diode.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.40 | $4.40 |
| 10+ | $3.36 | $3.36 |
| 100+ | $2.77 | $2.77 |
| 500+ | $2.42 | $2.42 |
| 800+ | $2.26 | $2.26 |
| 2,400+ | $2.11 | $2.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage is 650 V.
It is available in TO-263-3 / D2PAK (2 leads + tab) surface-mount package, with supplier device package D2PAK-3.
The operating junction and storage temperature range is -55°C to +175°C.
The compliance data lists this part as RoHS3 Compliant, though the status is marked unverified.
The typical VCE(sat) is 1.6 V at IC = 30 A, with a maximum of 2.1 V at VGE = 15 V and IC = 30 A.
The maximum junction temperature is 175°C.
Yes, the datasheet lists AEC-Q101 qualification for automotive applications.