SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,530 pcs
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3530 pcs | On Request | 1 | On Request | On Request | 00+P/ | On Request | On Request | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
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48 pcs
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48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ADG419BR is a single-pole, double-throw (SPDT) analog switch manufactured by Analog Devices using an enhanced LC2MOS process. This process provides low power dissipation, high switching speed, and low on-resistance.
The switch features a low on-resistance of less than 35 Ω, ensuring excellent linearity and low distortion across the full analog input range. Its ultralow power dissipation is less than 35 μW, making it ideal for portable and battery-powered instruments. The transition time is a maximum of 160 ns, and it exhibits break-before-make switching action.
With a maximum supply rating of 44 V, the ADG419BR supports an analog signal range from VSS to VDD. It is designed for applications requiring precision test equipment, instrumentation, battery-powered systems, and sample hold systems. The CMOS construction ensures minimal power consumption.
The ADG419BR is available in a Mini-DIP package.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.84 | $7.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum supply voltage for the ADG419BR is 44 V.
The on-resistance of the ADG419BR is less than 35 Ω.
The power dissipation of the ADG419BR is less than 35 μW.
The transition time for the ADG419BR is a maximum of 160 ns.
The ADG419BR provides break-before-make switching action.
The analog signal range for the ADG419BR is from VSS to VDD.
