SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The AD648JN is a matched pair of low power, precision monolithic operational amplifiers from Analog Devices. Fabricated with ion-implanted FET and laser wafer trimming technologies, it offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max). The input bias current is guaranteed over the entire common-mode voltage range.
This dual op amp features excellent DC performance, including a low offset voltage and drift, and low noise. Its AC performance includes a slew rate of 1.8 V/µs and a 1 MHz unity gain bandwidth. The AD648JN is available in Plastic Mini-DIP, CERDIP, and Plastic SOIC packages, with SOIC surface mount options available on tape and reel.
Recommended for dual supply op amp applications requiring low power and excellent DC and AC performance, the AD648JN is suitable for battery-powered precision instrument front ends and CMOS DAC buffers. Its combination of low input offset voltage and drift, low bias current, and low 1/f noise minimizes output errors.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum quiescent current for the AD648JN is 400 µA.
The maximum bias current, when warmed up, for the AD648JN is 10 pA.
The slew rate for the AD648JN is 1.8 V/µs.
The unity gain bandwidth for the AD648JN is 1 MHz.
The AD648JN is available in Plastic Mini-DIP, CERDIP, and Plastic SOIC packages.
