| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,001 pcs
|
2001 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The INTEL GE28F256K3C120 is a high-density NAND Flash memory component designed for various electronic applications. It offers a memory density of 268,435,456 bits, organized as 16M words by 16 bits.
Key electrical specifications include a maximum access time of 120 ns, a supply voltage range of 2.7V to 3.6V with a nominal value of 3V, and CMOS technology. The device supports asynchronous operating mode and features common flash interface and command user interface capabilities. It also supports synchronous burst mode operation.
Packaged in a VFBGA (Very Thin Fine-Pitch Ball Grid Array) with 56 pins, the GE28F256K3C120 is designed for surface mounting. The package dimensions are 14.5 mm in length and 9 mm in width, with a maximum seated height of 1 mm and a terminal pitch of 0.75 mm. It operates within an industrial temperature range of -40°C to 85°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory density is 268435456 bit.
The maximum access time is 120 ns.
The operating temperature range is -40°C to 85°C.
It uses a VFBGA package with 56 pins.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
The supply voltage ranges from 2.7V to 3.6V, with a nominal value of 3V.