| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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167 pcs
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167 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A5U1GA31ATS-BC from AD is a 1Gb SLC NAND Flash Memory designed for cost-effective solid-state mass storage. It operates with a 3.3V supply voltage, ranging from 2.7V to 3.6V.
This memory device features an endurance of 100K Program/Erase cycles with ECC, ensuring reliability for write-intensive applications. Data retention is rated for 10 years. Key operations include a typical page program time of 200us and a typical block erase time of 1.5ms. Random read access is a maximum of 25us, with serial access at 25ns.
The memory is organized as 128M x 8bit or 64M x 16bit, with a data register size of (2K + 64) bytes or (1K + 32) words. It supports automatic program and erase functions, including internal verification and margining.
Available in Pb-FREE 48-Pin TSOP I and 63-Ball BGA packages, the A5U1GA31ATS-BC is suitable for various non-volatile storage applications, including solid-state file storage and portable devices requiring non-volatility.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The A5U1GA31ATS-BC operates at 3.3V.
The endurance is 100K Program/Erase cycles.
The data retention period is 10 years.
The A5U1GA31ATS-BC is available in TSOP I and BGA packages.
The typical page program time is 200us.
The typical block erase time is 1.5ms.