BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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20,000 pcs
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20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors A5G35H110NT4 is a GaN RF Power Transistor designed for high-frequency applications. It operates within a frequency range of 3.3 GHz to 3.7 GHz, providing a typical gain of 15 dB.
This transistor is rated for a supply voltage of 48 V and can handle an average power of 15 W. It features a typical efficiency of 54% and is manufactured using GaN technology, indicating suitability for demanding RF power applications.
The component is housed in a DFN 7 x 6.5 package, suitable for surface mounting. Its specifications suggest applications in RF power amplification where performance and efficiency are critical.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage is 48 V.
The package is DFN 7 x 6.5.
It operates from 3.3 GHz to 3.7 GHz.
The typical gain is 15 dB.
The typical efficiency is 54%.
The average power is 15 W.
The process is GaN.