| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP A3T23H450W23SR6 is an RF power LDMOS transistor featuring an asymmetrical Doherty configuration. It is designed for cellular base station applications requiring wide instantaneous bandwidth from 2300 to 2400 MHz. This device delivers 87W average output power under W-CDMA test conditions with a PAR of 9.9 dB. Typical gain ranges from 14.7 dB at 2300 MHz to 15.2 dB at 2400 MHz, with drain efficiency around 46-47%. The transistor operates at 30V supply voltage and is housed in the ACP-1230S-4L2S package. It supports high negative gate-source voltage range for improved Class C operation and is designed for digital predistortion error correction systems. The device can withstand high output VSWR and broadband operating conditions. Absolute maximum ratings include drain-source voltage up to 65V and junction temperature up to 225°C. ESD protection is Class 2 (HBM) and Class C3 (CDM).
The device operates at 30V typical supply voltage, with an absolute maximum operating voltage of 32V.
It is housed in the ACP-1230S-4L2S (NI-1230S-4L2S) package.
The junction temperature range is -40°C to +225°C.
The device is listed as RoHS3 Compliant, but this has not been verified from the datasheet.
The frequency range is 2300 to 2400 MHz.
The device delivers 87W average output power under W-CDMA test conditions.
Typical gain ranges from 14.7 dB at 2300 MHz to 15.2 dB at 2400 MHz.