| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A3T21H400W23SR6 is an RF power LDMOS transistor from NXP Semiconductors, part of the AIRFAST family. It is an asymmetrical Doherty transistor designed for cellular base station applications requiring wide instantaneous bandwidth from 2110 to 2200 MHz.
Key electrical specifications: It delivers 71 W average output power with a typical power gain of 15.7 dB at 2110 MHz and drain efficiency of 52.8%. The device operates at 28 V supply voltage with a quiescent current of 700 mA. It features a maximum drain-source voltage of 65 V and gate-source voltage range of -6 to +10 V.
Design features: The transistor is designed for digital predistortion error correction systems and can withstand high output VSWR. It has an operating junction temperature range of -40 to +225 °C and storage temperature range of -65 to +150 °C. Thermal resistance junction-to-case is 0.14 °C/W.
Packaging: The device is housed in an ACP-1230S-4L2S surface mount package with solder termination. It is RoHS3 compliant, REACH unaffected, and has MSL 1 unlimited rating.
| Qty | Low | High |
|---|---|---|
| 150+ | $117.30 | $117.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating voltage is 32 Vdc.
It uses an ACP-1230S-4L2S surface mount package.
The case operating temperature range is -40 to +150 °C, and the junction temperature range is -40 to +225 °C.
Yes, it is RoHS3 compliant.
The typical output power is 71 W average.
It covers 2110 to 2200 MHz.